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  Roland R. Ackermann

 Correspondent Editor Bavaria

 Bodo’s Power Systems

(No session description available yet)

  Marco Palma

 Vice President, Motor Drive Marketing and System Engineering

 Efficient Power Conversion (EPC)

GaN Technology has evolved at a steady, but rapid pace over the last 17 years since first going into mass production. EPC has developed seven generations of discrete transistors that have surpassed MOSFETs in every technical category. In addition, GaN integrated circuits have been adopted in many applications from BLDC motor drives for robots and drones, to high DCDC converters and motor drives for satellite systems. So, what comes next?

  Roberto Scibilia

 Systems Application Engineer EU PDS Team

 Texas Instruments

In solid-state transformers (from medium voltage to low voltage) and high voltage converters, voltages of the DC link can become quite high, reaching more than 2.5 kV. When implementing auxiliary power supply, FETS with high voltages are required (higher than 3.3 kV). This presentation presents a self-balancing split-Flyback converter that can be connected to high voltage DC link while using lower voltage rating FETs. The topology consists of series dual-flyback converters which allows modular approach. Topology and control technique which allows self-balancing of capacitor voltages is then proposed. A low power 40W board, working from 1 kV to 2.5 kV input has been developed to prove the concept. The board is typically used as auxiliary power supply for solid-state transformers.

  Pietro Scalia

 Head of Power System Architecture and Marketing

 Renesas Electronics

As AI compute racks scale toward higher power densities and processor currents, efficient high-voltage power distribution must be complemented by an equally efficient conversion architecture within the compute tray. Direct conversion from an 800V rack bus to a 6V load rail provides a compelling alternative to conventional multi-stage power delivery, potentially eliminating intermediate 48V and 12V conversion stages while preserving the benefits of high-voltage distribution. Renesas has developed a modular 20 kW, 128:1 isolated LLC DCX prototype composed of four interleaved 5 kW full-bridge power cells. The converter employs next generation 650V GaN switches with QFN8x8 DSC, series-connected planar matrix transformers, low-voltage synchronous rectification, resonant soft-switching operation, integrated high-current conduction paths, and digital MCU based digital control. The architecture is designed to achieve greater than 96% conversion efficiency while maintaining a compact and scalable implementation. Renesas offers a full set of power building blocks, enabling use of its power portfolio in 800V hot-swap, Auxiliary Supply, Active Energy Storage, and DCX converters with 6/12/48V for Customers to implement Power Delivery Boards in Compute Racks.

  Sebastian Klötzer

 Sr. Principal Application Engineer

 Nexperia

High-voltage bidirectional switch (BDS) GaN devices are enabling new approaches to power conversion by integrating multiple switching functions within a single device and supporting highly efficient single-stage converter architectures. A growing range of HV BDS GaN technologies is now becoming available, each with different characteristics that influence performance, implementation and application suitability. This presentation provides an overview of the high-voltage bidirectional GaN device types currently available on the market, together with a comparison of their switching behaviour and key performance characteristics. It then examines how HV BDS GaN devices can be used to fully exploit single-stage power conversion topologies, reducing conversion stages and simplifying system design while improving efficiency and power density. Application examples from power supplies and electric vehicle on-board chargers (OBCs) demonstrate how HV BDS GaN technology is helping to unlock new levels of performance in demanding power electronics systems.

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  

 

 

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  Benoît Rousseau

 Vice President GaN Automotive

 Infineon Technologies

As automotive power electronics continue to evolve, system efficiency, power density, and cost optimization remain key design priorities. GaN offers new opportunities to address these challenges through superior switching performance and increased design flexibility. This presentation will provide a high-level perspective on how GaN can enable system-level improvements across automotive applications and examine the factors driving broader industry adoption.

  Torsten Loch

 VP Sales&Marketing

 AlpSemi

The large-scale adoption of Solid-State Circuit Breakers (SSCBs) has so far been held back by the difficulty of meeting their demanding performance and protection requirements while achieving the cost and footprint needed for industrial scalability. Most existing solutions rely on power semiconductors originally optimized for power conversion rather than solid-state protection. A purpose-built application-specific approach can address this gap by designing the power switch from the ground up around SSCB requirements. Nitride offers a particularly promising technology platform for developing such transistors, enabling the rollout of 800 VDC, 1,200 VDC, and higher-voltage architectures. This presentation will compare the benefits of Nitride-based power switches with those of SiC JFETs, SiC MOSFETs, silicon MOSFETs, and silicon IGBTs. It will also examine how Nitride can enable bidirectional power switches, ultimately supporting more compact, cost-effective, and scalable SSCB architectures.

  Farhan Beg

 Director of Application Engineering

 Cambridge GaN Devices (CGD)

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All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

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 X-Fab

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  Harald Parzhuber

 Systems Manager - Energy Infrastructure

 Texas Instruments

Requirements on efficiency for power conversion systems increase in all application areas from Solar, ESS to Datacenter and many more. High power density, high efficiency at optimal system cost are a difficult figure of merit to achieve. This presentation will focus on a three phase 3 level flying capacitor implementation with 10mΩ GaN modules in STOLT package. Architectural choice, best practice layout as well as improved control schemes will show how to achieve a peak efficiency over 99% up to 30kW operation in a 480V three phase system.

  Ken Henderson

 Hardware Engineer

 Cleverscope

At Cleverscope we have been focusing on measuring GaN and SiC transistor parameters; V_DS, I_S, V_GS and V_SAT, to determine correct operation and losses in the transistors. The measurements are done with Fiber Isolation and High CMRR so that devices at any voltage level in a power converter can be tested. Accurate Conduction and Switching loss calculation need High Resolution in both amplitude and time domains, particularly around the switching edges. We have used Dynamic Sample Rate Technology to achieve this. In the presentation we will outline why we have chosen to use Dynamic Sample Rate Technology and describe how it works at 250Msps and 5Gsps. And cover how we extract P_SWITCH and P_CONDUCTION in real time for accurate loss calculation, both in a short DPT and continuous operation. Finally we will show the compact device which makes these measurements and some preliminary results.

  Dr. Ajay Poonjal

 Director, Head of WBG Semiconductor Innovation and Application Engineering

 Sanan Semiconductor

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All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dr. Samaneh Sharbati

 Associate Professor

 University of Southern Denmark

Wide-bandgap GaN devices offer significant opportunities for high-efficiency, high-power-density, and high-frequency power conversion due to their fast-switching capability, but their performance is strongly influenced by device architecture, electric-field distribution, thermal management, and dynamic effects. This presentation will discuss our recent work on both lateral and vertical GaN power devices. For lateral GaN HEMTs and MISHEMTs, we address key challenges related to breakdown voltage, self-heating, and dynamic on-resistance. The influence of field-plate design on electric-field distribution and breakdown performance will be discussed, together with device-engineering approaches enabling breakdown voltages beyond 1KV. Strategies for mitigating dynamic degradation and improving thermal performance in compact device structures will also be presented. For vertical GaN devices, the focus will shift toward reducing specific on-resistance, improving switching performance, and minimizing conduction and switching losses for next-generation high-frequency, high-efficiency power electronic systems.

  Dr. Kamal Varadarajan

 Senior Director, GaN Platform Strategy

 Power Integrations

As EV, data center, and HVDC roadmaps push toward higher voltages, conventional GaN technology has hit a ceiling. Silicon-based GaN devices are difficult to scale beyond 900 V, leaving applications above 1,200 V dependent on SiC or complex, less efficient stacked GaN configurations. With industry-first 2200 V technology, Power Integrations is establishing a new frontier for GaN, bringing the technology into a high-voltage domain no other commercial GaN solution has reached. This technology gives engineers more headroom to design for next-generation EVs, AI data centers, renewable energy systems, and HVDC infrastructure without the added complexity of stacked device architectures. We will show that high power 1250 V GaN technology is already moving from engineering concept to the sampling phase and that the 2200V breakthrough further extends the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative. This presentation demonstrates the readiness of our 2200 V PowiGaN technology for next-generation high-voltage power systems, where industry roadmaps point toward 1500 V distribution architectures.

  Sascha Dern

 Vice President Sales EMEA & India

 Navitas Semiconductor

As AI workloads drive unprecedented growth in data center power demand, this presentation will cover the latest evolution of power delivery architectures, including the shift toward 800 V HVDC distribution. The session will showcase how breakthroughs in GaN technologies are enabling more efficient, scalable, and reliable power conversion solutions for next-generation data centers.

  

 

 

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