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  Alfred Vollmer

 Editor-in-Chief

 Bodo’s Power Systems

(No session description available yet)

  Speaker to be confirmed…

 

 STMicroelectronics

To be confirmed…

  Dr. Alex Lidow

 CEO and Co-founder

 Efficient Power Conversion (EPC)

In the past few years GaN ICs have seen rapid adoption in the motors that are used in applications such as drones, power tools, e-bikes, and humanoid robots. We will show why GaN ICs are so popular in low voltage BLDC motors and how these ICs will evolve in the next few years. To address the constantly increasing requirements for future applications, new features and functions are being added, as well as stretching to much higher power densities with more advanced platform technologies.

  Harald Parzhuber

 Systems Manager, Energy Infrastructure

 Texas Instruments

Microinverters and portable power stations are a rapidly growing end-user equipment segment. The presentation will outline how a single-stage converter (cyclo converter) makes the implementation of these end equipments more efficient, smaller in size, while reducing cost. Traditionally, cyclo converters have been implemented using discrete back-to-back Si- or GaN-FETs in a common-source configuration. In this presentation, the comparison of an implementation with bidirectional GaN (in common drain configuration) will be compared to the traditional one. The power conversion control algorithm in both implementations is based on extended-phase shift, which reduces the requirements on MCU speed and software complexity compared to resonant control algorithms. In this presentation, improvements in performance as well as cost will be summarized as well as the potential of bi-directional GaN switches in cyclo converter-based applications.

  Dr. Edward A. Jones

 Lead Principal Engineer

 Infineon Technologies

Gallium nitride transistors have already made a significant impact on the power electronics industry, with the wide bandgap material enabling HEMTs with better switching performance than traditional MOSFETs. Now, the monolithic bidirectional GaN HEMT is bringing a second wave of game-changing power system solutions. This talk will explain the inherent bidirectionality of GaN HEMTs, as well as common-source and common-drain device concepts. Focus applications and system topologies will also be reviewed, such as cyclo- and matrix converters, current-source inverters, and Vienna/t-type converters.

  Eli Hanak

 Sales Engineer

 Plexim

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Speaker to be confirmed…

 

 

To be confirmed…

  Patrick Minton

 Director of Business Development

 X-FAB

X-FAB is redefining how Gallium Nitride technology reaches innovators. While IDMs have focused on proprietary solutions, and some large players have exited GaN foundry offerings due to strategic fit, we believe the foundry model is not only viable - it’s a GameChanger. Customers are asking for layout flexibility, electrical tuning, and co-development support - needs that a specialty foundry is uniquely positioned to meet. Our X-FAB automotive-certified CMOS fab in Dresden (Germany), ensuring high quality standards and long-term supply assurance, delivers GaN on 200mm silicon substrates, with openness to alternative approaches, enabling solutions tailored to customers’ exact needs. With proven foundry offerings in analog/mixed-signal technologies, microsystems/MEMS, Photonics, silicon carbide (SiC), now we provide a gallium nitride (GaN) platform that empowers both start-ups and established innovators. This talk explores how X-FAB’s foundry model enables access, customization, and innovation - positioning GaN for its next wave of growth.

  Dr. Timothy Polom

 Field Applications Engineer

 ROHM Semiconductor

In this presentation, we highlight Rohm’s strategy for integration of GaN HEMTs with gate drivers and converter-level control intelligence. Years ago, Rohm proposed power stage products which already address the gate loop bottleneck challenging power GaN HEMT application. A next step has now been taken, implementing control loops and even more GaN device protection features in the products of the all-in-one, system-in-package (SiP) lineup. When the SiPs are applied, complete AC-DC and DC-DC converters are realized through the addition of only a few passive components. Embedded with current detection and convenient interfaces for controlling dv/dt slew rates, the SiPs offer many advantages in their compact, no-lead packages. To demonstrate the value added by Rohm’s system-in-package products, a quasi-resonant flyback converter is examined. Overall, the system-in-package approach is shown as a key enabler for advancing GaN application.

  Bétina Bebey

 EMEA Product Marketing Manager

 NXP Semiconductors

As electric vehicles (EVs) continue to evolve, the demand for more efficient, compact, and high-performance power electronics is accelerating. GaN technologies are emerging as a transformative solution for EV traction inverters, offering significant improvements in efficiency and power density. This presentation explores how GaN supports the development of cost effective and performant inverter designs, contributing to overall system optimization. A key focus will be on the role of advanced gate drivers in fully unlocking GaN’s potential, ensuring reliable and precise control. Attendees will gain insights into the practical benefits of GaN adoption and how it paves the way for next-generation mobility.

  Marco Ruggeri

 Snr. Manager of Power System Architecture Team

 Renesas Electronics

Gallium Nitride (GaN) technology enables monolithic bidirectional switches (BDS), a functionality unattainable with silicon or silicon carbide (SiC), providing simultaneous bidirectional current conduction and voltage blocking. By replacing conventional back-to-back switch configurations, GaN BDS significantly reduces component count and, leveraging the forthcoming 12-inch wafer process, are expected to achieve cost parity with silicon, while maintaining substantial performance advantages over SiC. These devices combine high switching frequency with low switching losses, thereby improving efficiency, power density, and cost effectiveness. Their unique characteristics simplify power architecture, enabling the move from conventional two-stage systems to compact single-stage AC-DC solutions. A notable example is the Dual-Active Bridge (DAB) topology, which can be implemented in single-stage Solar Microinverters, reducing size and enhancing efficiency. Similar benefits are evident in Vienna Rectifiers, where a single GaN BDS can replace back-to-back switches. Consequently, GaN BDS are highly suitable for solar, EV On-Board Charger, Energy Storage, and other applications.

  Llew Vaughan-Edmunds

 Senior Director, Product Management

 Navitas Semiconductor

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Andrew Smith

 Director of Training

 Power Integrations

To be confirmed…

  Dr. Rosemary O’Keeffe

 Senior Application Engineer

 Bourns

Modern power conversion techniques have been evolving to towards ever increasing speed and efficiency as part of the electrification revolution of recent years, driven by industries such as solar and automotive. Recently developed semiconductor technologies (SiC, GaN) help enable these technologies, but they do require careful design of the supporting circuitry to optimize their features. A key part the power conversion system is the driving of the semiconductor switches at its heart, that is the gate drive subsystem. The gate drive subsystem produces its own isolated power supply and the most critical component of this is the transformer. In this paper we will evaluate the performance of a family of miniature high isolation high power density planar transformers made by Bourns.

  Dr. Kevin Manez Tomas

 Principal Engineer

 Infineon Technologies

In the light of ever more power-hungry AI factories reaching soon GW-scale, the entire power delivery architecture needs to change. Rather than distributing 400V to 480V 3-phase AC, several large datacenter operators and GPU makers push for HV DC architectures with central generation of power. Future server boards will hence be operated on HV DC such as 800V DC rather than on 48V. There is consequently the need to explore high-voltage intermediate bus converters to convert power from 800V DC into 12V. The presentation will show the concept and experimental results.

  Dieter Liesabeths

 SVP of Product

 VisIC Technologies

VisIC Technologies introduces its latest D³GaN™ power module, optimized for Battery Electric Vehicle (BEV) inverter applications. Featuring ultra-low inductance of just 4nH, the module supports high-voltage operation at 650V and delivers current capabilities exceeding 400A. Designed for demanding automotive environments, it incorporates a robust gate structure that ensures reliable performance under inductive load conditions. The gate drive range of 0 to 20V, combined with a high threshold voltage (Vth > 7V), enhances noise immunity and switching stability. This module sets a new benchmark for efficiency, power density, and ruggedness in next-generation EV drivetrain systems. The Module can support up to over 100kW inverter applications. Measurement results and switching energies will be presented together with available evaluation systems.

  Dr. Samaneh Sharbati

 Associate Professor

 University of Southern Denmark

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dr. Jim Honea

 GaN Applications Director

 Nexperia

Switching reliability testing of GaN FETs helps establish the operational robustness of the devices in actual-use conditions by either revealing new failure modes or else confirming that there are no undiscovered failure modes. Stresses are high in such tests, but within data sheet limits, and so these are nominally tests-to-pass, rather than tests-to-fail. This presentation reviews aspects of operating-life testing conducted at Nexperia with 650V GaN FETs, including tests that use DC-AC converters as the test vehicles, such that the devices-under-test are operated in a manner typical of real use cases: sinusoidal current and DC bus voltage.

  Farhan Beg

 Director of Application Engineering

 Cambridge GaN Devices (CGD)

As the electric vehicle market develops, there is a continuous drive to look at new and novel approaches to further improve the efficiency of the traction inverter and other electrical subsystems. The efficiency of the power electronics in EV subsystems has improved greatly over recent years, largely due to the adoption of more efficient wide band gap switching technologies, such as silicon carbide. Increasingly vehicle manufacturers are looking at the wider system to find further improvements. A good example of this is the propulsion system, where improvements can be made to the efficiency of the of the motor by adopting new / alternative topologies in the power inverter. Multi-level inverters enable the use of much high switching frequencies and break down the total voltage into smaller steps, which in turn allows for improved efficiency and downsizing of other parts of the system. GaN technology optimizes the benefits of multi-level topologies. The manufacturing flow of GaN devices is more aligned to traditional silicon, which offers a cost advantage when compared to silicon carbide with has a more energy intensive and complex manufacturing flow. ICeGaN® technology brings a higher level of integration, lower cost, best in class robustness and ease of use. These features in turn lead to improved form factor and reduced weight.

  Speaker to be confirmed…

 

 MinDCet

To be confirmed…

  Dr. Stefania Carapezzi

 Field Applications Engineer

 Silvaco

Engineers continue to work on understanding the complex interaction of materials, geometry and quantum effects at the heart of GaN devices. The accuracy of physics-based simulation models is vital to allow full device design and optimization prior to manufacturing. This presentation will look at effects such as the two-dimensional electron gas (2DEG) and the phenomenon of current collapse in GaN high-electron-mobility transistors (HEMTs), caused by electron trapping. This effect can limit device performance, especially at high frequencies. The presentation will also show how parameters of TCAD models can be efficiently matched with real-life measurements by a ML-TCAD combined strategy, boosting the time-consuming traditional trial-and-error procedures, and validating the predictivity of TCAD simulations.

  Speaker to be confirmed…

 

 YOLE

To be confirmed…