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(No session description available yet)

  To be confirmed

 

 Infineon

Tbd…

  Dr. Alex Lidow

 CEO and Co-founder

 Efficient Power Conversion

Tbd…

  Alfred Hesener

 Senior Director Industrial and Consumer Applications

 Navitas

Tbd…

  Dr. Marnix Tack

 CTO & VP Business Development

 BelGaN

Started early 2022 as a new GaN-focused foundry at the heart of Europe, BelGaN recently announced the production-release of its Gen1 650V eGaN technology and is currently ramping-up production. BelGaN is now moving to a next stage by offering various differentiating services. Under the mantra “Make Our Customers Stronger” these services aim at empowering Fabless customers to behave as a virtual IDM towards their customers:
(1)  Open Foundry services, supporting process installs, PDKs, and providing capacity of 20k 8” wfrs/month
(2)  Quality services, enabling customers to deliver automotive quality GaN Chips to their customers
(3)  Design services, supporting our customers to develop GaN chips and dramatically reduce time-to-market throughout the value chain
(4)  Innovation services, through the ‘BelGaN Open Innovation Factory’, a Lab-to-Fab service bringing GaN innovations from proof-of-concept to industrialization and scale-up
(5)  GaN-ValleyTM, a European GaN ecosystem, offering unique benefits through collaboration along the GaN value chain

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dario Pagnano

 Principal GaN System Architect

 Nexperia

Gallium nitride (GaN) devices have emerged as superior alternatives to traditional Si technology, offering higher efficiency, power density, and cost-effectiveness. The GaN landscape features three main technologies: Depletion mode (D-mode), Enhancement mode (E-mode), and vertical GaN, although the latest one not yet broadly commercially available. D-mode function as normally-on switches, often combined with cascode or direct drive configurations offering higher gate threshold voltage, lower 3rd quadrant losses or lower gate leakage current. E-mode HEMTs, based on a p-GaN layer on the gate (normally-off), provide efficiency benefits at lower voltages, simpler manufacturing, and improved slew rate control. This presentation will analyse each technology’s strengths, weaknesses, target segments, applications, and market sizes.

  Dr. Denis Marcon

 General Manager

 Innoscience Europe

Tbd…

  Dieter Liesabeths

 Senior Vice President of Product

 VisIC Technologies

Tbd…

  Philip Zuk

 SVP Technical Marketing and Business Development

 Transphorm

Recent marketplace analysis questions the viability of Silicon Carbide (SiC) as a broad-spectrum wide bandgap (WBG) power conversion solution. While SiC’s performance and reliability are strong, its ROI is proving to only exist in exclusive higher power applications where costs and larger system footprints can easily be absorbed without impacting the end product’s overall value proposition.
Enter normally-off d-mode GaN: the WBG technology supporting 45 W to 7.5 kW in commercially available products. From adapters to data center PSUs and solar microinverters to uninterruptible power supplies, d-mode GaN demonstrates the performance, reliability, and versatility needed to cross the power spectrum. GaN technology delivers future-proofed innovation by offering 10X lower specific on-resistance limit over SiC. That benefit along with others have led to a 1200 V GaN platform (in development) that positions GaN as the next generation power conversion technology capable of efficiently serving up to 50+ kW applications.
To help audiences understand the now proven differences between the two technologies, this presentation will discuss:
· General market opinion of SiC and GaN
· SiC challenges
· Inherent advantages of various GaN platforms
· Specific advantages of normally-off d-mode GaN in cascode configuration versus SiC

  Andrew Smith

 Director of Training

 Power Integrations

Tbd…

  Joseph Duigan

 Senior Director, Engineering and Business Development

 Allegro MicroSystems

Simplifying your isolated gate drive design by integrating the isolated supply and the PWM information transfer across one isolation boundary inside one package is a huge system advantage. It immediately removes components from your system.  Also, one single isolation boundary reduces the system common-mode (CM) capacitance which reduces CM circulating currents in the system.  This eases filtering requirements.  The net effect is reduced cost, reduced BOM count, reduced filtering requirements improved system performance. This can be achieved today with the Allegro PowerThru isolated gate driver product family which is available now.

  

 

 

Enjoy the lunch break with fine food and networking.

  Peter Di Maso

 Vice President Business Development (Americas)

 Cambridge GaN Devices

In this talk, discover how ICeGaN™ technology is revolutionizing the Industrial and Automotive sectors by providing robust, reliable, and flexible solutions. We’ll explore the cutting-edge advancements and the pivotal role ICeGaN™ plays in shaping the future of power electronics.

  Thierry Bouchet

 CEO

 Wise Integration

Tbd…

  Dr.-Ing. Stefan Matlok

 Group Leader DC/DC Converter

 Fraunhofer IISB

Classic transistor switching cell compromise between parasitic inductance, switching speed, losses and overvoltage. Using the Zero Overvoltage Switching (ZOS) effect instead enables transistors to change their conductance step-like – without voltage overshoot and under the presence of parasitic inductance.

  To be confirmed

 

 ST Microelectronics

Tbd…

  Abdelmouneim Charkaoui

 Application Engineer

 ROHM Semiconductor

Industrial and consumer power supplies (power range of up to 500W) must be compact and energy efficient while at the same time meeting requirements of power factor correction and low input current THD. To achieve this a highly efficient AC/DC conversion with active PFC is needed. The totem pole topology is perfectly suited to meet this requirement. The properties of 650 V GaN HEMT devices make them a perfect choice for this topology. ROHM will present the benefits of a solution approach consisting of 650V GaN HEMTs, driving solutions and a matched control IC.  

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Alex Sami

 Vice President of Sales EMEA+India, Managing Director GaN Systems GmbH

 GaN Sytems

In this presentation, we will explore how the momentum of GaN power switches is steadily increasing in a multitude of application areas. The number of projects, variety of suppliers, and understanding of how GaN should be used has seen a steady and major increase. Product maturity has reached levels that allow for GaN adoption in Automotive, where it is expected to replace Si and SiC in various applications.

  Harald Parzhuber

 System Manager, Grid Infrastructure & Renewable Energy

 Texas Instruments

Combining the photovoltaic panel power point tracking and inverter simplifies the end user experience of installing a home solar system, leading to the recent trend of more microinverters entering the market; and their spinoff with the battery, the portable power station. However as these solutions become more popular, the push for power density and efficiency has grown to be competitive. This presentation will focus on looking at many of the popular topologies being leveraged for the DC/AC stage of microinverters; compare them based on their key parameters such as efficiency and cost; and show how each benefits, or doesn’t, from the application of SiC and GaN.

  Dr. Mike Wens

 CEO, Managing Director

 MinDCet

Tbd…

  

 

 imec

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 EXAGAN

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