Day 2 - December 13th, 2023

Bodo's WBG - GaN

Welcome to the preliminary program for the GaN track, which will be held in room Munich II at the Hilton Munich Airport. Below you can see the companies we are going to invite to present. If you feel your company is missing and you have something to say about Gallium Nitride, feel free to contact my team at Please note, there will be no public call for papers, the event is “invite only”.

We will constantly update this page with the titles, abstracts, and names of the speakers. You can expect the contributions to be highly technical.

All times refer to time zone CET

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Presentation title to be confirmed
  To be confirmed
Presentation title to be confirmed
  Dr. Alex Lidow
 CEO and Co-founder
 Efficient Power Conversion
Presentation title to be confirmed
  Alfred Hesener
 Senior Director Industrial and Consumer Applications
Empowering Fabless Customers to Become a Virtual IDM
  Dr. Marnix Tack
 CTO & VP Business Development
Started early 2022 as a new GaN-focused foundry at the heart of Europe, BelGaN recently announced the production-release of its Gen1 650V eGaN technology and is currently ramping-up production. BelGaN is now moving to a next stage by offering various differentiating services. Under the mantra “Make Our Customers Stronger” these services aim at empowering Fabless customers to behave as a virtual IDM towards their customers:
(1)  Open Foundry services, supporting process installs, PDKs, and providing capacity of 20k 8” wfrs/month
(2)  Quality services, enabling customers to deliver automotive quality GaN Chips to their customers
(3)  Design services, supporting our customers to develop GaN chips and dramatically reduce time-to-market throughout the value chain
(4)  Innovation services, through the ‘BelGaN Open Innovation Factory’, a Lab-to-Fab service bringing GaN innovations from proof-of-concept to industrialization and scale-up
(5)  GaN-ValleyTM, a European GaN ecosystem, offering unique benefits through collaboration along the GaN value chain
Coffee Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
Exploring the GaN Landscape: The Battle of Configurations or the Perfect Co-Existence
  Dario Pagnano
 Principal GaN System Architect
Gallium nitride (GaN) devices have emerged as superior alternatives to traditional Si technology, offering higher efficiency, power density, and cost-effectiveness. The GaN landscape features three main technologies: Depletion mode (D-mode), Enhancement mode (E-mode), and vertical GaN, although the latest one not yet broadly commercially available. D-mode function as normally-on switches, often combined with cascode or direct drive configurations offering higher gate threshold voltage, lower 3rd quadrant losses or lower gate leakage current. E-mode HEMTs, based on a p-GaN layer on the gate (normally-off), provide efficiency benefits at lower voltages, simpler manufacturing, and improved slew rate control. This presentation will analyse each technology’s strengths, weaknesses, target segments, applications, and market sizes.
Presentation title to be confirmed
  Dr. Denis Marcon
 General Manager
 Innoscience Europe
Presentation title to be confirmed
  Dieter Liesabeths
 Senior Vice President of Product
 VisIC Technologies
The Long-Awaited Power Shift:
Normally-Off d-Mode GaN Takes Its Rightful Place
  Philip Zuk
 SVP Technical Marketing and Business Development
Recent marketplace analysis questions the viability of Silicon Carbide (SiC) as a broad-spectrum wide bandgap (WBG) power conversion solution. While SiC’s performance and reliability are strong, its ROI is proving to only exist in exclusive higher power applications where costs and larger system footprints can easily be absorbed without impacting the end product’s overall value proposition.
Enter normally-off d-mode GaN: the WBG technology supporting 45 W to 7.5 kW in commercially available products. From adapters to data center PSUs and solar microinverters to uninterruptible power supplies, d-mode GaN demonstrates the performance, reliability, and versatility needed to cross the power spectrum. GaN technology delivers future-proofed innovation by offering 10X lower specific on-resistance limit over SiC. That benefit along with others have led to a 1200 V GaN platform (in development) that positions GaN as the next generation power conversion technology capable of efficiently serving up to 50+ kW applications.
To help audiences understand the now proven differences between the two technologies, this presentation will discuss:
· General market opinion of SiC and GaN
· SiC challenges
· Inherent advantages of various GaN platforms
· Specific advantages of normally-off d-mode GaN in cascode configuration versus SiC
Presentation title to be confirmed
  Andrew Smith
 Director of Training
 Power Integrations
Isolated Gate-Drive – Made Easy
  Joseph Duigan
 Senior Director, Engineering and Business Development
 Allegro MicroSystems
Simplifying your isolated gate drive design by integrating the isolated supply and the PWM information transfer across one isolation boundary inside one package is a huge system advantage. It immediately removes components from your system.  Also, one single isolation boundary reduces the system common-mode (CM) capacitance which reduces CM circulating currents in the system.  This eases filtering requirements.  The net effect is reduced cost, reduced BOM count, reduced filtering requirements improved system performance. This can be achieved today with the Allegro PowerThru isolated gate driver product family which is available now.
Lunch Break & Tabletop Exhibition
Enjoy the lunch break with fine food and networking.
The Key to Sustainable and Robust Industrial and Automotive Applications
  Peter Di Maso
 Vice President Business Development (Americas)
 Cambridge GaN Devices
In this talk, discover how ICeGaN™ technology is revolutionizing the Industrial and Automotive sectors by providing robust, reliable, and flexible solutions. We’ll explore the cutting-edge advancements and the pivotal role ICeGaN™ plays in shaping the future of power electronics.
Pioneering the Future of Power Electronics with Digital GaN Technology
  Thierry Bouchet
 Wise Integration
The ZOS Effect – Unveil Full Performance of Unlimited Fast Semiconductor Devices
  Dr.-Ing. Stefan Matlok
 Group Leader DC/DC Converter
 Fraunhofer IISB
Classic transistor switching cell compromise between parasitic inductance, switching speed, losses and overvoltage. Using the Zero Overvoltage Switching (ZOS) effect instead enables transistors to change their conductance step-like – without voltage overshoot and under the presence of parasitic inductance.
Presentation title to be confirmed
  To be confirmed
 ST Microelectronics
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GaN Devices and AC/DC Controller IC for High Efficiency Single Phase Totem Pole PFC 
  Abdelmouneim Charkaoui
 Application Engineer
 ROHM Semiconductor
Industrial and consumer power supplies (power range of up to 500W) must be compact and energy efficient while at the same time meeting requirements of power factor correction and low input current THD. To achieve this a highly efficient AC/DC conversion with active PFC is needed. The totem pole topology is perfectly suited to meet this requirement. The properties of 650 V GaN HEMT devices make them a perfect choice for this topology. ROHM will present the benefits of a solution approach consisting of 650V GaN HEMTs, driving solutions and a matched control IC.  
Coffee Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
How GaN Improves the Efficiency and Speed of Decarbonization
  Alex Sami
 Vice President of Sales EMEA+India, Managing Director GaN Systems GmbH
 GaN Sytems
In this presentation, we will explore how the momentum of GaN power switches is steadily increasing in a multitude of application areas. The number of projects, variety of suppliers, and understanding of how GaN should be used has seen a steady and major increase. Product maturity has reached levels that allow for GaN adoption in Automotive, where it is expected to replace Si and SiC in various applications.
Microinverter Topology Trade-offs and where WBG Weighs in
  Harald Parzhuber
 System Manager, Grid Infrastructure & Renewable Energy
 Texas Instruments
Combining the photovoltaic panel power point tracking and inverter simplifies the end user experience of installing a home solar system, leading to the recent trend of more microinverters entering the market; and their spinoff with the battery, the portable power station. However as these solutions become more popular, the push for power density and efficiency has grown to be competitive. This presentation will focus on looking at many of the popular topologies being leveraged for the DC/AC stage of microinverters; compare them based on their key parameters such as efficiency and cost; and show how each benefits, or doesn’t, from the application of SiC and GaN.
Presentation title to be confirmed
  Dr. Mike Wens
 CEO, Managing Director
Invitation sent
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Invitation sent
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Slot is available!
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Slot is available!
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