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  Alfred Vollmer

 Editor-in-Chief

 Bodo’s Power Systems

(No session description available yet)

  Dr. Alex Lidow

 CEO and Co-founder

 Efficient Power Conversion (EPC)

To be confirmed…

  Harald Parzhuber

 Systems Manager, Energy Infrastructure

 Texas Instruments

To be confirmed…

  

 

 Infineon Technologies

To be confirmed…

  

 

 Toshiba Electronics

To be confirmed…

  

 

 

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  

 

 STMicroelectronics

To be confirmed…

  

 

 X-FAB

To be confirmed…

  

 

 ROHM Semiconductor

To be confirmed…

  

 

 NXP Semiconductors

To be confirmed…

  

 

 Renesas

To be confirmed…

  Llew Vaughan-Edmunds

 Senior Director, Product Management

 Navitas Semiconductor

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  

 

 Power Integrations

To be confirmed…

  

 

 Bourns

To be confirmed…

  

 

 Infineon Technologies

To be confirmed…

  Dieter Liesabeths

 SVP of Product

 VisIC Technologies

VisIC Technologies introduces its latest D³GaN™ power module, optimized for Battery Electric Vehicle (BEV) inverter applications. Featuring ultra-low inductance of just 4nH, the module supports high-voltage operation at 650V and delivers current capabilities exceeding 400A. Designed for demanding automotive environments, it incorporates a robust gate structure that ensures reliable performance under inductive load conditions. The gate drive range of 0 to 20V, combined with a high threshold voltage (Vth > 7V), enhances noise immunity and switching stability. This module sets a new benchmark for efficiency, power density, and ruggedness in next-generation EV drivetrain systems. The Module can support up to over 100kW inverter applications. Measurement results and switching energies will be presented together with available evaluation systems.

  Dr. Samaneh Sharbati

 Associate Professor

 University of Southern Denmark

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dr. Jim Honea

 GaN Applications Director

 Nexperia

To be confirmed…

  

 

 Cambridge GaN Devices (CGD)

To be confirmed…

  

 

 MinDCet

To be confirmed…

  Dr. Stefania Carapezzi

 Field Applications Engineer

 Silvaco

Engineers continue to work on understanding the complex interaction of materials, geometry and quantum effects at the heart of GaN devices. The accuracy of physics-based simulation models is vital to allow full device design and optimization prior to manufacturing. This presentation will look at effects such as the two-dimensional electron gas (2DEG) and the phenomenon of current collapse in GaN high-electron-mobility transistors (HEMTs), caused by electron trapping. This effect can limit device performance, especially at high frequencies. The presentation will also show how parameters of TCAD models can be efficiently matched with real-life measurements by a ML-TCAD combined strategy, boosting the time-consuming traditional trial-and-error procedures, and validating the predictivity of TCAD simulations.

  

 

 Rohde & Schwarz

To be confirmed…