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  Alfred Vollmer

 Editor-in-Chief

 Bodo’s Power Systems

(No session description available yet)

  Peter Friedrichs

 Fellow SiC Innovation and Industrialization

 Infineon Technologies

Connected to the further rollout of new power infrastructure architectures, mainly related to an increasing portion of DC based setup, solid state devices like power semiconductors take over more and more the role of the old mechanical systems like line frequency transformers (replaced by solid state transformers) or circuit breakers. In the course of this transition the existing up time requirements need to be fulfilled also by the new technologies and thus, work is ongoing to prove and enhance the stability of SiC based power semiconductors especially under critical operation modes. Coming from the ultimate ruggedness of mechanical solutions which have the label to be practically unbreakable additional measures have to be developed. The presentation will shortly present recent solutions to tackle short circuit behavior of MOSFETs and ho JFETs can meet the special robustness demands of soli sate circuit breakers.

  Dr. Garrett Schlenvogt

 VP of Global Field Applications Engineering

 SILVACO

First-pass success is common in advanced CMOS design, but first-article success for SiC power devices remains difficult because device architecture, full-die layout, material properties, and process variation interact in complex ways. This presentation introduces a simulation-first methodology for evaluating these effects before fabrication through a purpose-built EDA flow for vertical power devices. Combining full-die layout with technology-stack data, the approach provides insight into RDS(on), IR drop, current distribution, gate resistance, and gate-delay behavior using physics-based extraction, sensitivity analysis, and visual mapping. It also examines variations in layer thickness, resistivity, and other fabrication parameters to identify performance bottlenecks, assess design margins, and reveal which process variations most strongly affect consistency and yield. Rather than replacing hardware validation, this variation-aware workflow helps engineers focus physical experiments, accelerate yield learning, reduce avoidable design iterations, and improve confidence that first silicon will meet performance targets.

  

 

 

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  Dr. Christian Felgemacher

 Director Application Engineering

 ROHM Semiconductor

Power conversion applications from electric vehicle powertrains to power supply systems in AI datacentres and in renewable energy generation share the requirement for cost-effective high-performance power semiconductors. ROHM’s recently developed 5^th Generation of Silicon Carbide MOSFETs present a number of improvements over previous generations such as a reduction in on-state resistance at high operating temperatures of approximately 30%. In this presentation these improvements are explored and the benefits resulting from these improvements in the aforementioned target applications are illustrated.

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

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 Mitsubishi Electric

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  Dr. Jens Baringhaus

 Chief Expert WBG Technologies

 Robert Bosch GmbH

Robust SiC MOSFETs are key components for future electric vehicles. New generations of trench-based devices offer superior on-state performance and enable further increases in the power density of automotive power electronics. At the same time, demands for longer operating lifetimes and greater robustness intensify the trade-offs between performance and reliability. Novel design features can mitigate these trade-offs and improve both aspects simultaneously. Using Bosch’s third-generation SiC MOSFET technology as an example, this presentation demonstrates how advanced trench architectures can reduce off-state electric fields and gate-oxide stress while enhancing avalanche and short-circuit robustness. The resulting combination of high efficiency, excellent thermal performance, and outstanding reliability makes these devices ideally suited for automotive and industrial power-electronics applications.

  Nitesh Satheesh

 Senior Manager, Product Marketing

 Microchip Technology

AI data centers are driving unprecedented growth in power demand, challenging conventional power distribution architectures in efficiency, scalability, and power density. Solid-state transformers (SSTs) offer a path to medium-voltage DC distribution, reducing conversion stages and enabling more efficient power delivery. This presentation examines emerging SST topologies for AI infrastructure and discusses how high-voltage silicon carbide technology in the right form factor enables the efficiency, power density, and reliability required for large-scale deployment.

  Niklaus Felderer

 Head of Customer Solutions

 Plexim

Real-time simulation of high-power converters becomes increasingly challenging as converter topologies grow to hundreds of semiconductor devices. Conventional approaches often impose practical limits on circuit size, switch count, or require partitioning of the electrical system. This presentation introduces an FPGA-based solver architecture designed to overcome these limitations. The RT Box FlexArray solver uses non-ideal switch models and a specialized computational architecture capable of processing matrices of arbitrary size. Unlike conventional FPGA workflows, the solver does not require application-specific bitstream generation: converter models can be compiled and executed on the existing FPGA architecture without resynthesizing the hardware. Because the system equations remain structurally constant across switching states, large, strongly coupled converter systems can be simulated without an inherent switch-count limit. The presentation will explain the underlying modeling approach, and demonstrate its application to large power-electronic systems containing more than one hundred independently switching semiconductor devices.

  Masoumeh Amirbandeh

 Power Application Engineer

 Bourns

While SiC technology has accelerated the development of Solid-State Transformers, achieving a commercially viable SST requires overcoming a less visible but equally critical challenge: isolation. Partial discharge performance, insulation coordination, creepage and clearance constraints, and long-term reliability become increasingly difficult as operating voltages rise. This presentation explores the real-world challenges faced when designing medium-frequency transformers for SST applications and highlights a Bourns insulation solution developed to meet demanding medium-voltage requirements while maintaining high power density and efficiency.

  Jens Eltze

 Director of Business Development

 APEX Microtechnology

In power applications where failure is either not an option, compromises safety, disrupts operations, or leads to significant costs, understanding how a module behaves under actual operating conditions is key to improving reliability. By capturing essential operating data in real time and feeding it into a behavioral model, a digital twin provides deeper insight into the module’s performance and condition. This approach can help identify emerging failure risks, estimate remaining service life, and support informed decisions about maintenance and operation. The presentation will outline the joint efforts of UPM and Apex to improve power module robustness through digital twins and modern, AI-driven models. It will explore how connecting physical modules with their digital counterparts can translate operating data into actionable reliability insights. The goal is to move beyond monitoring current performance toward anticipating potential problems, enabling proactive intervention, and supporting reliable operation throughout the module’s service life.

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dr. Fabien Thion

 Technical Marketing Manager

 Vincotech

Selecting a 1200 V SiC MOSFET requires more than comparing datasheet values. Device characteristics can influence module performance differently depending on the application and operating conditions. In this presentation, Vincotech shares the results of a benchmark involving 1200 V SiC MOSFETs from five chip suppliers. All devices are evaluated using the same module type and consistent test conditions, allowing a direct comparison of their measured characteristics. We examine the differences observed and discusses how device design and optimization priorities may contribute to them. Application simulations extend the comparison beyond the test bench. They show where differences remain subtle, where they become more relevant, and how a device’s strengths may align with particular operating requirements. We provide a clearer view of the trade-offs between the devices and a practical framework for assessing which characteristics matter most for their target application, rather than relying on a single headline performance figure.

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 Wolfspeed

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 StarPower

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  Sascha Dern

 Vice President Sales EMEA & India

 Navitas Semiconductor

Artificial intelligence is driving an unprecedented expansion of power-hungry computing infrastructure, creating new challenges for energy efficiency, power density, reliability, and scalability across both data centers and the electrical grid. This presentation explores how advanced Silicon Carbide (SiC) technologies, spanning high-voltage (HV) and ultra-high-voltage (UHV) SiC power semiconductors, are enabling the next generation of AI and energy infrastructure. The session will highlight the role of SiC MOSFETs, SiC JFETs, and SiC power modules in delivering high performance and high reliability in these demanding mission-critical applications.

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dr. Didier Balocco

 Business Marketing Engineer, Power Solutions Group

 onsemi

Breaker is a safety component that protects installations and users. In some installations, having an intelligent (so electronic) breaker could make easier the control, the maintenance, and the operation of the breaker. In this session, we will see why SIC JFET is the best candidate to make the power switch needed for AC eBreaker. To conclude, we will see also how SiC JEFT can also be used as a protection device for DC bus systems.

  Dr. Virgiliu Botan

 Senior Product Manager BiMOS

 Hitachi Energy

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  David Kuschnarew

 Lead Hardware Architect

 eMoveUs

eMoveUs presents an embedded power module development based on a shift-left development methodology within ISO 26262 and ASPICE-compliant V-cycles. Multi-domain co-simulation of electrical, magnetic, electrostatic, and thermal effects is applied during early design phases to reduce physical prototyping and validation effort. The developed embedded power module was fabricated and benchmarked against a state-of-the-art 3-phase DCB module under identical installation and operating conditions. Measurements demonstrate 1.5 nH power module stray inductance without snubber circuits, comparable thermal resistance, suppression of internal oscillations, and improved system-level EMI performance. The results validate the effectiveness of virtual multi-physics optimization for accelerating embedded power module development while optimising electrical and thermal performance. Based on the evaluation results of the embedded power module, embedding is also evaluated in comparison to discrete TO-247 packages.

  Bengt Sprätz

 Product Application Engineer

 Nexperia

As power conversion systems utilizing SiC and other wide bandgap (WBG) materials continue to increase in power density, efficiency and switching speed, engineers require more flexible ways to evaluate devices, compare technologies and optimize designs. Designed to address these challenges, NexFlex provides a versatile platform for evaluating and benchmarking advanced WBG semiconductor technologies under consistent operating conditions. Its modular architecture enables direct comparisons between package technologies such as XS NexPak and QDPAK, helping engineers better understand the impact of package choice on switching performance, thermal behaviour and system-level power density. Interchangeable gate driver boards support rapid assessment of different gate drive strategies, including solutions with and without Miller clamp or DESAT protection. Dedicated plug-in gate resistor boards further simplify optimization by enabling quick parameter changes without soldering or board rework. In addition, NexFlex supports a range of validation activities, including double-pulse testing, efficiency characterization, short-circuit robustness evaluation and PTO investigations, providing a practical environment for exploring design trade-offs and validating next-generation power conversion architectures and applications.