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  Guy Moxey

 Senior Vice President, Business Development and Marketing

 Wolfspeed

Silicon carbide has a fundamental part to play as electromobility (or e-mobility) markets drive towards a more sustainable, CO2-neutral future. E-mobility applications, including off-highway vehicles, aircraft, and watercraft, are making the switch to all electric platforms. Learn how the latest innovations in SiC technology are uniquely qualified to power e-mobility across land, sky, and sea through reliable and efficient energy conversion, consumption and delivery.

  To be confirmed

 

 Toshiba Electronics

Tbd…

  Rob Weber

 Product Line Director, Silicon Carbide

 Microchip

SiC MOSFETS are ideally suited for high-voltage applications in trains, transformers, chargers, defibrillators and more. However, the combination of high voltage and fast switching create dynamic new challenges in efficient driving and safe control of the devices. In this presentation, we will review a software configurable approach to gate driving, Microchip’s Augmented Switching™ technology and how incorporating this capability into plug-and-play drivers can accelerate high-voltage system designs.

  Francois Perraud

 Product Marketing Manager – SiC and Multichip Discrete

 Littelfuse

Littelfuse’s new isolated discrete packages using high performance ceramics exhibit a remarkable thermal performance. SiC MOSFETs can remain up to 75°C cooler, or the system power output be increased by more than 45% as compared to systems built using standard non-isolated discrete components. Learn how Littelfuse advanced isolated packages truly unlock the full potential of the power dense SiC semiconductor.

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Ranbir Singh

 EVP Navitas Semiconductor, SiC Business

 Navitas

Tbd…

  Gergő Varga

 Sr. Development Engineer - Application & Concept

 Vincotech

Optimal power module design depends on minimizing stray inductance to reduce voltage overshoot, switching losses, and switching oscillations. Minimizing stray inductance is even more critical for WBG devices, which switch at rates of several kV/µs. This study introduces a power module DCB layout featuring optimally designed, low-inductive commutation loops, informed by 3D-FEM simulations. It highlights the pivotal role that 3D-FEM simulation can play in streamlining the power module design process, mitigating the need for debugging in the lab, avoiding additional DCB design cycles, and, thereby, reducing costs and time to market.

  To be confirmed

 

 onsemi

Tbd…

  Dr. Virgiliu Botan

 Senior Product Manager BiMOS

 Hitachi Energy

SiC is becoming the semiconductor of choice in key applications that require efficiency. As we go up in blocking voltage, i.e. 3300V and higher, the cost of SiC increases over proportionally. Even in these conditions, there are applications, like DC-DC converters in traction, or Solid State Transformers that start to see a payback with SiC. For these applications, we are optimizing our LinPak module in terms of electromagnetics, thermal and electrical performance to deliver the lowest on-state and switching losses. An additional important parameter of optimization in this multi-dimentional design space is the amount of SiC MOSFET dies and their size that is used.   

  To be confirmed

 

 Mitsubishi Electric

Tbd…

  Steffen Ewald

 Manager Application Engineering

 Fuji Electric

Tbd…

  

 

 

Enjoy the lunch break with fine food and networking.

  Dr. Peter Friedrichs

 Vice President SiC

 Infineon

Tbd…

  Dr. David Sheridan

 Vice President SiC Products

 Alpha and Omega Semiconductor

Although SiC MOSFET performance in automotive applications is superior to Si IGBTs, the impact of second order SiC MOSFET parameters and SiC specific reliability differences across available technologies can impact critical design decisions.  We will show aSiC MOSFET’s unique advantages in these area to help designers boost performance while maximizing the long term system quality.

  Alejandro Esquivel

 Senior Sales Manager PDS

 Qorvo

Tbd…

  To be confirmed

 

 Richardson RFPD

Tbd…

  Dr. Ajay Poonjal Pai

 Director of WBG Innovation & Application Engineering

 Sanan Semiconductors

Silicon Carbide has emerged as a promising material for power semiconductors, owing to its higher bandgap compared to Silicon. The higher bandgap enables unipolar power switches in the kilo volt range, bringing significant benefits in terms of efficiency and power density. As a consequence, SiC is already seeing mass adoption in various applications. However, several challenges still remain. In this presentation, the key benefits of SiC as well as the challenges in mass adoption of SiC are discussed. It will be explained how Sanan Semiconductors is working to solve some of these challenges, with its vertically integrated SiC production, i.e., from substrate to devices.  

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Mirco Drews

 Senior Application Engineer

 Semikron Danfoss

WBG materials and especially SiC power semiconductors are becoming increasingly important in the automotive market. SiC is rapidly increasing its market share in automotive power modules and is an integral part of future platform designs. One of the reasons for this is the efficiency advantages of SiC compared to the widely used Si IGBT power modules. However, in order to exploit the full potential of WBG power semiconductors, there are high requirements on the bonding and joining technologies of the power modules, in particular to enable operation at high temperatures. Semikron Danfoss is facing these challenges and offers the necessary advanced packing technologies in its automotive products. The technologies used and their advantages over conventional technologies will be explained.

  To be confirmed

 

 CISSOID

Tbd…

  M.Sc. Nico Schmied

 Power Electronic Engineering

 Fraunhofer IISB

Theoretically, the ZOS effect allows to switch transistors without voltage overshoot and any switching loss. But several design challenges need to be considered, like matching parasitic elements of the switching cell, dealing with non-ideal parasitic inductances, and how to parallel transistors. To overcome the low switching speed performance of today’s transistors of several nanoseconds, a high performance LV-GaN-based gate driver is necessary. Mathematical considerations, as well as different test setups are presented to demonstrate the path towards achieving decades-faster switching performance of tomorrow’s power electronic.

  To be confirmed

 

 ST Microelectronics

Tbd…

  

 

 APEX Microtechnology

(No session description available yet)

  

 

 WeEn

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