Day 2 - December 13th, 2023

Bodo's WBG - SiC

Welcome to the preliminary program for the SiC track, which will be held in room Munich I at the Hilton Munich Airport. Below you can see the companies we are going to invite to present. If you feel your company is missing and you have something to say about Silicon Carbide, feel free to contact my team at Please note, there will be no public call for papers, the event is “invite only”.

We will constantly update this page with the titles, abstracts, and names of the speakers. You can expect the contributions to be highly technical.

All times refer to time zone CET

Klick title to show / hide detailed session description

(No session description available yet)
Enabling E-Mobility for Every Driver and Vehicle
  Guy Moxey
 Senior Vice President, Business Development and Marketing
Silicon carbide has a fundamental part to play as electromobility (or e-mobility) markets drive towards a more sustainable, CO2-neutral future. E-mobility applications, including off-highway vehicles, aircraft, and watercraft, are making the switch to all electric platforms. Learn how the latest innovations in SiC technology are uniquely qualified to power e-mobility across land, sky, and sea through reliable and efficient energy conversion, consumption and delivery.
Presentation title to be confirmed
  To be confirmed
 Toshiba Electronics
Playing with Fire: How to Safely Drive and Control High-Voltage SiC Modules
  Rob Weber
 Product Line Director, Silicon Carbide
SiC MOSFETS are ideally suited for high-voltage applications in trains, transformers, chargers, defibrillators and more. However, the combination of high voltage and fast switching create dynamic new challenges in efficient driving and safe control of the devices. In this presentation, we will review a software configurable approach to gate driving, Microchip’s Augmented Switching™ technology and how incorporating this capability into plug-and-play drivers can accelerate high-voltage system designs.
A 75°C Cooler SiC Thanks to High Performance Ceramic-Based Discrete Isolated Packages
  Francois Perraud
 Product Marketing Manager – SiC and Multichip Discrete
Littelfuse’s new isolated discrete packages using high performance ceramics exhibit a remarkable thermal performance. SiC MOSFETs can remain up to 75°C cooler, or the system power output be increased by more than 45% as compared to systems built using standard non-isolated discrete components. Learn how Littelfuse advanced isolated packages truly unlock the full potential of the power dense SiC semiconductor.
Coffee Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
Presentation title to be confirmed
  Ranbir Singh
 EVP Navitas Semiconductor, SiC Business
Harnessing 3D-FEM to Optimize Stray Inductance in Power Module Commutation Loops
  Gergő Varga
 Sr. Development Engineer - Application & Concept
Optimal power module design depends on minimizing stray inductance to reduce voltage overshoot, switching losses, and switching oscillations. Minimizing stray inductance is even more critical for WBG devices, which switch at rates of several kV/µs. This study introduces a power module DCB layout featuring optimally designed, low-inductive commutation loops, informed by 3D-FEM simulations. It highlights the pivotal role that 3D-FEM simulation can play in streamlining the power module design process, mitigating the need for debugging in the lab, avoiding additional DCB design cycles, and, thereby, reducing costs and time to market.
Presentation title to be confirmed
  To be confirmed
SiC Modules for High Voltage Applications
  Dr. Virgiliu Botan
 Senior Product Manager BiMOS
 Hitachi Energy
SiC is becoming the semiconductor of choice in key applications that require efficiency. As we go up in blocking voltage, i.e. 3300V and higher, the cost of SiC increases over proportionally. Even in these conditions, there are applications, like DC-DC converters in traction, or Solid State Transformers that start to see a payback with SiC. For these applications, we are optimizing our LinPak module in terms of electromagnetics, thermal and electrical performance to deliver the lowest on-state and switching losses. An additional important parameter of optimization in this multi-dimentional design space is the amount of SiC MOSFET dies and their size that is used.   
Presentation title to be confirmed
  To be confirmed
 Mitsubishi Electric
Performance and Benefit of 2.3kV SiC MOSFETs / Si IGBTs for Industrial Applications
  Steffen Ewald
 Manager Application Engineering
 Fuji Electric
Lunch Break & Tabletop Exhibition
Enjoy the lunch break with fine food and networking.
Presentation title to be confirmed
  Dr. Peter Friedrichs
 Vice President SiC
Performance and Quality: What you need from SiC MOSFETs for EV Applications
  Dr. David Sheridan
 Vice President SiC Products
 Alpha and Omega Semiconductor
Although SiC MOSFET performance in automotive applications is superior to Si IGBTs, the impact of second order SiC MOSFET parameters and SiC specific reliability differences across available technologies can impact critical design decisions.  We will show aSiC MOSFET’s unique advantages in these area to help designers boost performance while maximizing the long term system quality.
Presentation title to be confirmed
  Alejandro Esquivel
 Senior Sales Manager PDS
Presentation title to be confirmed
  To be confirmed
 Richardson RFPD
Powering the SiC Revolution with Vertical Integration
  Dr. Ajay Poonjal Pai
 Director of WBG Innovation & Application Engineering
 Sanan Semiconductors
Silicon Carbide has emerged as a promising material for power semiconductors, owing to its higher bandgap compared to Silicon. The higher bandgap enables unipolar power switches in the kilo volt range, bringing significant benefits in terms of efficiency and power density. As a consequence, SiC is already seeing mass adoption in various applications. However, several challenges still remain. In this presentation, the key benefits of SiC as well as the challenges in mass adoption of SiC are discussed. It will be explained how Sanan Semiconductors is working to solve some of these challenges, with its vertically integrated SiC production, i.e., from substrate to devices.  
Coffee Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
Key Technologies to Enable the Full Potential of SiC Inside Automotive Traction Power Modules
  Mirco Drews
 Senior Application Engineer
 Semikron Danfoss
WBG materials and especially SiC power semiconductors are becoming increasingly important in the automotive market. SiC is rapidly increasing its market share in automotive power modules and is an integral part of future platform designs. One of the reasons for this is the efficiency advantages of SiC compared to the widely used Si IGBT power modules. However, in order to exploit the full potential of WBG power semiconductors, there are high requirements on the bonding and joining technologies of the power modules, in particular to enable operation at high temperatures. Semikron Danfoss is facing these challenges and offers the necessary advanced packing technologies in its automotive products. The technologies used and their advantages over conventional technologies will be explained.
Presentation title to be confirmed
  To be confirmed
Implementing the ZOS Effect in Real Power Electronics
  M.Sc. Nico Schmied
 Power Electronic Engineering
 Fraunhofer IISB
Theoretically, the ZOS effect allows to switch transistors without voltage overshoot and any switching loss. But several design challenges need to be considered, like matching parasitic elements of the switching cell, dealing with non-ideal parasitic inductances, and how to parallel transistors. To overcome the low switching speed performance of today’s transistors of several nanoseconds, a high performance LV-GaN-based gate driver is necessary. Mathematical considerations, as well as different test setups are presented to demonstrate the path towards achieving decades-faster switching performance of tomorrow’s power electronic.
Presentation title to be confirmed
  To be confirmed
 ST Microelectronics
Invitation sent
 APEX Microtechnology
(No session description available yet)
Invitation sent
(No session description available yet)
Slot is available!
(No session description available yet)