Day 2 - December 13th, 2023

Bodo's WBG - SiC

Welcome to the preliminary program for the SiC track, which will be held in room Munich I at the Hilton Munich Airport. Below you can see the companies we are going to invite to present. If you feel your company is missing and you have something to say about Silicon Carbide, feel free to contact my team at Please note, there will be no public call for papers, the event is “invite only”.

We will constantly update this page with the titles, abstracts, and names of the speakers. You can expect the contributions to be highly technical.

All times refer to time zone CET

Klick title to show / hide detailed session description

  Alfred Vollmer
 Bodo’s Power Systems
(No session description available yet)
Enabling E-Mobility for Every Driver and Vehicle
  Guy Moxey
 Senior Vice President, Business Development and Marketing
Silicon carbide has a fundamental part to play as electromobility (or e-mobility) markets drive towards a more sustainable, CO2-neutral future. E-mobility applications, including off-highway vehicles, aircraft, and watercraft, are making the switch to all electric platforms. Learn how the latest innovations in SiC technology are uniquely qualified to power e-mobility across land, sky, and sea through reliable and efficient energy conversion, consumption and delivery.
How Trench-Based SiC MOSFETs Can Meet the Global Energy Challenge
  Dr. Peter Friedrichs
 Vice President SiC
Green electrical energy is the key element for the future of our planet - and wasting this valuable resource is a no-go! Therefore, highest efficiency from generation to consumption is the leading principle. Achieving this goal requires not only electrical efficiency itself, but also a holistic view of the component and system value chain. The presentation will show how and why trench-based SiC device technologies are the ultimate answer to these challenges for many different applications and use cases. Reliable long-term operation under a variety of use profiles, as well as robust operation under extreme conditions, are factors relevant to the long-term success of a power semiconductor technology. Infineon’s CoolSiCTM MOSFETs offer all the prerequisites to be the solution, based on a broad product portfolio and dedicated packages and control/driving technologies. Concrete application examples will underline the superior performance of this new wide bandgap power semiconductor solution.
Playing with Fire: How to Safely Drive and Control High-Voltage SiC Modules
  Cam Pham
 Senior Technical Staff Applications Engineer
SiC MOSFETS are ideally suited for high-voltage applications in trains, transformers, chargers, defibrillators and more. However, the combination of high voltage and fast switching create dynamic new challenges in efficient driving and safe control of the devices. In this presentation, we will review a software configurable approach to gate driving, Microchip’s Augmented Switching™ technology and how incorporating this capability into plug-and-play drivers can accelerate high-voltage system designs.
A 75°C Cooler SiC Thanks to High Performance Ceramic-Based Discrete Isolated Packages
  Francois Perraud
 Product Marketing Manager – SiC and Multichip Discrete
Littelfuse’s new isolated discrete packages using high performance ceramics exhibit a remarkable thermal performance. SiC MOSFETs can remain up to 75°C cooler, or the system power output be increased by more than 45% as compared to systems built using standard non-isolated discrete components. Learn how Littelfuse advanced isolated packages truly unlock the full potential of the power dense SiC semiconductor.
Coffee Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
High-speed Gen-3F GeneSiC Delivers Best-in-Class Efficiency from 300 – 800 kHz
  Ranbir Singh
 EVP Navitas Semiconductor, SiC Business
Proprietary ‘trench-assisted planar gate technology’ is a no-compromise next-gen upgrade vs. legacy planar and trench SiC. It provides the lowest RDS(ON) shift over temperature, and highest system efficiency in real-life operating conditions, including 300-800 kHz ZVS CCM. 100% avalanche testing, easy paralleling, and extended short-circuit withstand time combine to deliver a robust, reliable, long-term solution.
Powering the SiC Revolution with Vertical Integration
  Dr. Ajay Poonjal Pai
 Director of WBG Innovation & Application Engineering
 Sanan Semiconductors
Silicon Carbide has emerged as a promising material for power semiconductors, owing to its higher bandgap compared to Silicon. The higher bandgap enables unipolar power switches in the kilo volt range, bringing significant benefits in terms of efficiency and power density. As a consequence, SiC is already seeing mass adoption in various applications. However, several challenges still remain. In this presentation, the key benefits of SiC as well as the challenges in mass adoption of SiC are discussed. It will be explained how Sanan Semiconductors is working to solve some of these challenges, with its vertically integrated SiC production, i.e., from substrate to devices.  
Specifics in characterizing SiC MOSFETs Short-Circuit Capability and Ruggedness
  Sara Kochoska
 Staff Characterization Engineer SiC R&D Department
The short-circuit (SC) performance of SiC power MOSFETs has been extensively characterized in recent years. The failure modes have been categorized as: failure-to-open (FTO) and failure-to-short (FTS). Moreover, short-circuit withstand capability (tSCWT) is also dependent on factors such as: device-to-device threshold voltage (Vth) variations, the external gate resistance (RG), the power loop stray inductance (Lstray) and etc. In this presentation, the authors dive deeper into the SiC device specifics for further correlation to the short-circuit behavior.
SiC Modules for High Voltage Applications
  Dr. Virgiliu Botan
 Senior Product Manager BiMOS
 Hitachi Energy
SiC is becoming the semiconductor of choice in key applications that require efficiency. As we go up in blocking voltage, i.e. 3300V and higher, the cost of SiC increases over proportionally. Even in these conditions, there are applications, like DC-DC converters in traction, or Solid State Transformers that start to see a payback with SiC. For these applications, we are optimizing our LinPak module in terms of electromagnetics, thermal and electrical performance to deliver the lowest on-state and switching losses. An additional important parameter of optimization in this multi-dimentional design space is the amount of SiC MOSFET dies and their size that is used.   
SiC Utilization. Why to Hesitate?
  Eugen Stumpf
 Senior Manager, Technical Marketing Medium and Low Power
 Mitsubishi Electric
SiC power semiconductors have emerged as crucial components in various applications such as renewables and automotive technology. However, in dedicated applications like heat pumps, there exists a hesitancy towards adopting SiC. This hesitation is not rooted in the price of SiC power semiconductors, but rather in concerns about their reliability and the status of their initial quality. Today, we aim to dispel these doubts surrounding the use of SiC power modules by presenting compelling arguments related to their performance, initial quality, and methods to assess reliability throughout their operational lifespan. Improvements or “Changes for the Better” in above field are presented.
Performance and Benefit of 2.3kV SiC MOSFETs / Si IGBTs for Industrial Applications
  Steffen Ewald
 Manager Application Engineering
 Fuji Electric Europe GmbH
Efficiency requirements and simplification of power electronics circuits led to the development of Si-IGBT and SiC-MOSFET devices with a blocking voltage of 2.3 kV. These devices are suitable for all applications which demand a 1.5 kV DC-link. Previously available devices were either insufficient (1.7 kV) due to too little blocking voltage margin, or inefficient (3.3 kV) due to too high conduction and switching losses. In order to mitigate those deficiencies, often complex three -level topologies using 1.2 kV devices were used in 1.5 kV applications. The newly developed 2.3 kV devices will enable the user to build a two-level topology, which significantly reduces the system complexity compared to a three-level topology, while being highly efficient and cost-effective.
Lunch Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
The SiC Cube - A Modular Multi-Level SiC Power Design for PFC Applications
  Dr. Matthias Ortmann
 Chief Engineer
 Toshiba Electronics
Wide bandgap (WBG) technology, such as SiC, offers lower RDS(ON), higher switching frequencies, and improved robustness – capabilities that contribute to advanced design goals utilizing such technology. When choosing components for their end equipment, board designers are faced with a sometimes overwhelming number of different options available either directly from semiconductor manufacturers or distributors. Challenged with getting their product to the market quickly, they simply do not have the time to perform a full laboratory evaluation of the performance of every single component that has the specifications they need, meaning their final decision is likely based on a trade-off of cost versus performance advances. Toshiba recognizes this pressure and is responding by moving towards solutions-based offerings that complement its standalone products.
Toshiba’s EV Charger PFC Reference Design Concept, or SiC Cube, supports engineers for a better evaluation of particular trade off points. This PFC reference design concept, is an excellent example of a solutions-based approach and thanks to its modularity enables boards to be trialed in various power conversion applications.
This power factor correction (PFC) building block with a multi-level architecture is based on Toshiba’s third generation of SiC MOSFETs and included Schottky barrier diodes and smart gate drivers, to support 22kW 3-phase operation. Having such closely matched constituent components means it delivers a PFC reference design platform on which highly effective power systems can be developed. Containing power switching bridge-leg boards, plus inductor and capacitor boards, connected to a TMPM4K microcontroller board, its 3D modular stacking arrangement enables significant footprint savings and delivers high power density.
The presentation will explain the basic solution based concept together with the high performance of the implemented design structures utilizing Toshiba´s 3rd generation SiC MOSFET technology.
Performance and Quality: What you need from SiC MOSFETs for EV Applications
  Dr. David Sheridan
 Vice President SiC Products
 Alpha and Omega Semiconductor
Although SiC MOSFET performance in automotive applications is superior to Si IGBTs, the impact of second order SiC MOSFET parameters and SiC specific reliability differences across available technologies can impact critical design decisions.  We will show aSiC MOSFET’s unique advantages in these area to help designers boost performance while maximizing the long term system quality.
Why SiC FETs excel in Soft-switching Power Conversion Applications
  Kiran Kumar Ramachandra
 Sr. Field Applications Engineer
The efficiency of switch mode power converters is comprised of conduction losses and switching losses. While conduction losses are unavoidable in any power converter, the advent of soft-switching techniques has provided the opportunity to reduce the power losses incurred during switching. Soft-switching power topologies require very specific attributes from the power transistor such as a low and ‘cost-competitive’ on-resistance, low conduction losses during freewheeling and low output capacitance. SiC and GaN power transistors are well suited for this, but from among these class of products the SiC JFET-based cascode FETs (also known as SiC FETs) are particularly advantageous. This presentation explains how SiC FETs helps users maximize the efficiency, power density and system cost of their DC-DC soft-switched designs.
Challenges of Short Circuit Protection for Wide Band Gap Power Semiconductors
  Michele Sclocchi
 Field Applications Engineer
 Richardson RFPD
Due to their higher efficiency and faster switching speeds, Wide Band Gap (WBG) Devices are being widely used as alternatives to Silicon Power MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The use of these devices in high current and switching frequency applications brings new design challenges, from more demanding drive requirements to short-circuit protection. This presentation will highlight the challenges and outline solutions to protect WBG devices against short-circuit events.
Harnessing 3D-FEM to Optimize Stray Inductance in Power Module Commutation Loops
  Gergő Varga
 Sr. Development Engineer - Application & Concept
Optimal power module design depends on minimizing stray inductance to reduce voltage overshoot, switching losses, and switching oscillations. Minimizing stray inductance is even more critical for WBG devices, which switch at rates of several kV/µs. This study introduces a power module DCB layout featuring optimally designed, low-inductive commutation loops, informed by 3D-FEM simulations. It highlights the pivotal role that 3D-FEM simulation can play in streamlining the power module design process, mitigating the need for debugging in the lab, avoiding additional DCB design cycles, and, thereby, reducing costs and time to market.
Coffee Break & Tabletop Exhibition
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
Key Technologies to Enable the Full Potential of SiC Inside Automotive Traction Power Modules
  Mirco Drews
 Senior Application Engineer
 Semikron Danfoss
WBG materials and especially SiC power semiconductors are becoming increasingly important in the automotive market. SiC is rapidly increasing its market share in automotive power modules and is an integral part of future platform designs. One of the reasons for this is the efficiency advantages of SiC compared to the widely used Si IGBT power modules. However, in order to exploit the full potential of WBG power semiconductors, there are high requirements on the bonding and joining technologies of the power modules, in particular to enable operation at high temperatures. Semikron Danfoss is facing these challenges and offers the necessary advanced packing technologies in its automotive products. The technologies used and their advantages over conventional technologies will be explained.
A Modular Hardware & Software Platform Accelerates the Development and Testing of High Voltage SiC Inverters
  Mike Sandyck
 Marketing Director
This presentation will explain how CISSOID’s SiC Inverter hardware and software platform accelerates the development and testing of electric powertrains for E-Mobility applications, e.g. electric super cars, new autonomous vehicle concepts, E-Trucks or E-buses, Off-road agricultural or industrial vehicles,  as well as electric and hybrid VTOL or electric boats. This “grey-box” hardware/software platform comprises a SiC intelligent power module (IPM), a real-time controller board and customisable e-motor control software, a liquid cooler reference design, and a specially designed high-density DC-link capacitor. It enables the calibration and testing of a SiC-based electric motor drive within a week.
Implementing the ZOS Effect in Real Power Electronics
  M.Sc. Nico Schmied
 Power Electronic Engineering
 Fraunhofer IISB
Theoretically, the ZOS effect allows to switch transistors without voltage overshoot and any switching loss. But several design challenges need to be considered, like matching parasitic elements of the switching cell, dealing with non-ideal parasitic inductances, and how to parallel transistors. To overcome the low switching speed performance of today’s transistors of several nanoseconds, a high performance LV-GaN-based gate driver is necessary. Mathematical considerations, as well as different test setups are presented to demonstrate the path towards achieving decades-faster switching performance of tomorrow’s power electronic.
Unleashing the Power of SiC Switches: Innovative Packaging for Enhanced Power Density
  David Kudelásek
 Application Engineer
 ST Microelectronics
New 3rd generation of ST’ silicon carbide witches already demonstrated its advantages, now the new package with top side cooling can bring the design to next level – make the application more efficient. We will show the application performance of our SiC Gen3 devices in a new package its comparison to other packages.
IEC White Paper “Power semiconductors for an energy-wise Society”
  Dr. Iulian Nistor
 IEC Project Partner
The IEC Market Strategy Board (MSB) has published a new white paper entitled “Power semiconductors for an energy-wise Society”. The MSB is responsible for identifying and investigating principle technological trends and market needs in the IEC’s fields of activity. The white paper establishes the critical role that power semiconductors play in transitioning to an energy wise society with emphasis on new wide-bandgap based power semiconductors and especially Silicon Carbide for the higher power range. The presentation will highlight the key topics covered in the white paper which provides an in-depth look at expected trends and opportunities, as well as the challenges surrounding the power semiconductors industry at both component and application levels. The paper will also address the pivotal role of standards in removing technical risks, increasing product quality and enabling faster market acceptance while identifying the current standardization gaps.
Usage of 1700 V SiC FETs in Auxiliary Power Supplies of Inductive Charging Systems 800 V
  Dr. Darko Vračar
 Senior Staff Engineer
 BRUSA Elektronik
The increased popularity of battery electric-vehicles in last years moved focus of the research and development activities towards future charging technologies like inductive charging. This presentation will address choice, implementation aspects, and experimental results when 1700 V SiC devices are used in auxiliary power supply of an 800 V inductive charging system. The active-clamped flyback and quasi-resonant flyback dc-dc converters’ topologies were used as auxiliary power supplies.