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  Roland R. Ackermann

 Correspondent Editor Bavaria

 Bodo’s Power Systems

(No session description available yet)

  Leo Aichriedler

 Distinguished Engineer Application Marketing

 Infineon Technologies

New, emerging low-voltage (< 1000VAC and < 1500VDC) power distribution schemes require fast-acting circuit protection devices, which are typically implemented as solid-state circuit breakers (SSCBs). Unlike conventional electromechanical breakers, SSCBs comprise semiconductor power switches enable the interruption of faulted circuits within sub-µs range. The employed power switch has to support low conduction losses during normal operation while also being capable to handle extreme overvoltage and overcurrent / short-circuit events in a reliable manner. To meet these specific requirements, Infineon Technologies has developed an application-tailored Silicon Carbide JFET technology that enables ultra-low RDSon (1mΩ - 5mΩ at 750V - 1.2kV VBDss) power devices in standard discrete packages. Starting from key requirements of SSCB applications, the presentation focuses on the specific features of the new JFET technology and demonstrates its performance using practical application measurements.

  Salvatore La Mantia

 Technical Marketing Manager

 STMicroelectronics

As multi-kW converter designs increasingly rely on Silicon Carbide (SiC) MOSFETs, paralleling discrete devices becomes essential to achieve necessary current and thermal capabilities. Despite potential engineers’ hesitation, this presentation demonstrates that proper techniques allow parallel SiC MOSFETs to significantly boost converter performance and design flexibility.

  Dr. Khalid Hussein

 Senior Manager Power Semiconductor, Technical Marketing Automotive

 Mitsubishi Electric

To be confirmed…

  Dr. David Sheridan

 Vice President SiC Products

 Alpha and Omega Semiconductor

To be confirmed…

  Dr. Virgiliu Botan

 Senior Product Manager BiMOS

 Hitachi Energy

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Dr. Christian Felgemacher

 Director Application Engineering

 ROHM Semiconductor

Transfer molded half-bridge modules with SiC MOSFETs are already available and established for use in high power converters of above 100 kVA such as xEV traction inverters. Additionally, for power conversion stages of not much more than 20 kVA solutions exist in the form of HSDIP20 modules with 4-in-1 or 6-in-topologies, which offer great alternatives to discrete devices for creating compact and highly integrated designs. For medium power applications between these power areas device paralleling is often required. To close this gap ROHM has developed the compact DOT247 module. In this presentation the package will be introduced and its benefits, such as reduced commutation loop inductance as well as improved heat dissipation will be discussed along with usage options in target applications such as datacenter power supplies or charging infrastructure.

  Dr. Darko Vračar

 Power Electronics Senior Engineer

 The Exploration Company

Recently we are witnessing a move from turbochargers towards electricpump-fed systems in rocket engines and many companies entering the space business. The presentation will start with short introduction of liquid-fuel rocket engines and their electrification trends. Then power electronics related topics like choice of semiconductors, high altitude and vacuum operation, radiation hardness, partial discharge, and cryogenic aspects will be covered. Also, practical tips and challenges for hardware development engineers will be presented as well as opportunities for semiconductors’ manufactures.

  Dr. Andrei Mihaila

 Director SiC Mosfet Design

 StarPower

To be confirmed…

  Roy Hali

 Senior Application Engineer

 HIOKI

Engineers working with WBG semiconductors in their designs need measurement solutions to validate efficiency gains that simulations promise. Since these efficiency gains can be as small as 0.1%, accurate and repeatable test results are a must. Wide bandgap semiconductors such as SiC and GaN are driving the next generation of power conversion systems. Their superior material properties enable higher switching frequencies, lower losses, and conversion efficiencies that often exceed 98%, clearly surpassing conventional Si-based devices. While these advantages allow more compact, lighter, and more efficient designs, they also introduce new measurement challenges. High switching frequencies, fast transients, and reduced loss levels make it increasingly difficult to capture accurate data with conventional approaches. In this presentation, we will discuss these challenges and showcase HIOKI’s advanced solutions for precise and reliable evaluation of conversion efficiency under high-frequency and high-efficiency operating conditions.

  Dr. Jorge Mari

 Senior Principal Engineer

 Semikron Danfoss

With the objective of reducing direct current and associated conductor sizes, many applications have seen an incrase in the DC link voltage to up to 1500V. This is the case for utility-scale solar farms, Energy Storage Systems, electrolyzers for Hydrogen production, High Power EV chargers, Trucks and Off Highway Vehicles. With these applications in mind, all of which require a high reliability product, Semikron Danfoss has developed a 1700A 2kV SiC power module which is now in series production. The module exhibits a fantastic 0.8 mΩ forward resistance and thanks to its careful chip-layout exhibits stable text-book switching waveforms in all its voltage, current and temperature range. Through extensive qualification tests at chip and module level the module is best prepared for applications requiring reliable long life performance. In this talk we shall illustrate some of these features comparing its advantages over higher voltage modules.

  Speaker to be confirmed…

 

 

To be confirmed…

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Fatih Cetindag

 SiC Principal Power Application Engineer

 Nexperia

This presentation provides a detailed evaluation of SiC MOSFET discrete packages, focusing on thermal and electrical performance differences between top-side-cooled and bottom-side-cooled architectures. It compares three key packages: D²PAK-7, X.PAK, and QDPAK. A major finding is that the top-side-cooled QDPAK and X.PAK packages support significantly higher power levels than the bottom-side-cooled D²PAK-7. This is due to their superior thermal management: top-side-cooled devices dissipate heat directly from the top of the package to a heatsink via a thermal interface material, decoupling thermal and electrical paths. In contrast, D²PAK-7 relies on PCB-based heat dissipation, which limits its thermal performance. The analysis also shows that top-side-cooled packages offer lower parasitic loop inductance and enable higher power density and peak efficiency, especially under continuous high-load conditions. The presentation concludes with design recommendations, emphasizing the importance of selecting a package architecture that co-optimizes thermal and electrical performance to fully exploit the advantages of SiC technology in advanced power applications.

  Andrea Vinci

 Senior Technical Marketing Manager

 Tektronix

Tektronix will present the critical factors affecting current sharing in paralleled SiC Mosfets configurations, in particular when it’s needed to determine potential imbalances causing devices to overheat or fail prematurely

  Karsten Düchting

 Senior Strategic Marketing Manager High Voltage Power Products

 Allegro MicroSystems

To be confirmed…

  Speaker to be confirmed…

 

 Bosch

To be confirmed…

  Rob Weber

 Senior Business Development Director

 Navitas Semiconductor

Critical infrastructure upgrades in power grids, data centers, and renewable energy are driving new standards for longevity and resiliency in power semiconductors. To address these requirements, a novel trench-assisted planar SiC MOSFET technology is being deployed to support over 20 years of continuous operation. Further, advanced press-fit power modules, using epoxy-resin potting, provide protection against moisture and thermal stress. The final result is stable, reliable performance for infrastructure where failure is not an option.

  

 

 

All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!

  Sebastian Pawusch

 Application Engineer Automotive

 Fuji Electric

Today’s BEVs predominantly use 2-level Voltage Source Inverters for traction, moving from IGBT based inverters to SiC-MOSFET based inverters. Inverter efficiency has greatly enhanced with the use of SiC, but system losses, EMI emissions can still be improved. PWM harmonics from 2-level inverters add copper, iron and rotor stray losses, causing heat in the electric machine limiting the constant output power. For most motor types used in traction their efficiency is limited when using 2-level inverters. Continuous increase in battery voltage and faster devices increase common mode disturbance and dV/dt, causing insulation and bearing stress. 3-level T-type inverters halve device switching voltage, enabling lower switching losses or higher switching frequency. Consequently, their output waveform closer resembles a sinusoidal waveform, lowering THD and current ripple. Additionally, dV/dt and common mode voltage are reduced, therefore lowering insulation stress and EMI emissions. Overall lower current ripple on the machine side improves its efficiency significantly.

  Speaker to be confirmed…

 

 

To be confirmed…

  Dr. Didier Balocco

 PSG EMEA Marketing

 onsemi

SiC for Motor Drive : When does it make sense? The International Energy Agency (IEA) estimates that motors are responsible for more than 45% of the world’s total electricity. Thus, finding ways to maximize their operational efficiency is paramount. The use of WBG materials, such as Silicon Carbide (SiC), allow those devices to outperform their Silicon (Si) equivalents. Higher efficiency drives, using SiC, can be smaller, more reliable and can reduced cost of ownership.

  Dr. Ajay Poonjal Pai

 Director of WBG Innovation & Application Engineering

 Sanan Semiconductor

Zero-voltage switching (ZVS) in a power converter is a key technique for reducing switching losses, thereby enabling higher switching frequencies. ZVS is achieved by minimizing the voltage/current overlap during switching transitions through circuit parasitics or small passive-reactive components. This work investigates today’s leading 1200V SiC power MOSFETs under ZVS in a half-bridge up to 350kHz, providing clear device-selection criteria for designers of ultra-efficient, high-density soft-switching converters.

  Speaker to be confirmed…

 

 Wolfspeed

To be confirmed…