Day 2 - December 4th, 2024

Bodo's WBG - SiC

Welcome to the program for the SiC track, which will be held in room Munich I at the Hilton Munich Airport. Below you can see the companies we have invited to present. Please note, there will be no public call for papers, the event is “invite only”. You can expect the contributions to be highly technical.

All times refer to time zone CET

Klick title to show / hide detailed session description

08:00
A5
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Opening
  Alfred Vollmer
 Editor-in-Chief
 Bodo’s Power Systems
(No session description available yet)
08:30
S1
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What it takes to make it real: Opportunities and challenges moving to 1500-V architectures
  Guy Moxey
 Senior Vice President, Business Development and Marketing
 Wolfspeed
Meeting rising power needs is a known challenge for our industry. Consequently, the move to 1500-V DC bus architectures is a necessary trend to solve the need for more power in limited spaces. Pioneered by the solar industry, it is now proliferating into wind-power applications, mega-watt charging, and big battery-electric vehicles (BEVs). But is the power electronics supply chain ready to meet the growing trend? In this presentation, we will take a realistic look at the complete ecosystem needed to support the move to 1500-V applications and address the bottlenecks on this transition’s way.
08:45
S2
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Hidden pits of SiC MOSFET benchmarking and evaluation
  Aleš Loidl
 Head of Power and Energy Application Lab
 STMicroelectronics
Silicon Carbide (SiC) has revolutionized power converters, offering unprecedented speed, size reduction, and efficiency. Yet, the question remains: how do we select the optimal SiC MOSFET for a specific application? Traditional selection methods are reaching their limits. This presentation will delve into intriguing aspects of SiC MOSFET application benchmarking...
09:00
S3
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(presentation title to be confirmed)
  Dr. David Sheridan
 Vice President SiC Products
 Alpha and Omega Semiconductor
To be confirmed…
09:15
S4
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Pushing the SiC portfolio boundaries - 400V and 3.3kV SiC MOSFETs
  Dr. Peter Friedrichs
 Fellow SiC Innovation & Industrialization
 Infineon
To be confirmed…
09:30
B1
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Coffee Break & Tabletop Exhibition
  
 
 
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
10:15
S5
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(presentation title to be confirmed)
  Dr. Ajay Poonjal Pai
 Director of WBG Innovation & Application Engineering
 Sanan Semiconductors
To be confirmed…
10:30
S6
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GaN & SiC Technologies Enable Next-Gen AI Data Centers
  Alfred Hesener
 Senior Director Industrial and Consumer Applications
 Navitas
Next-generation AI GPUs like NVIDIA’s Blackwell B100 and B200 each demand over 1 kW of power for high-power computation, 3x higher than traditional CPUs. These new demands are driving power-per-rack specifications from 30 to 40 kW up to 100 kW. Using GaNSafe power ICs alongside Gen-3 “Fast” SiC MOSFETs with ‘trench-assisted-planar’ technology, enables highest power densities and system efficiencies over 137 W/in3 and over 98% efficiency in AI data centers PSUs ranging from 3.2 KW to 8.5kW.
10:45
S7
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SiC Power Packaging Unlocks Full Potential of High-Power Applications
  Dr. Ing. Tomas Krecek
 Technical Applications Engineer
 Microchip Technology
The electrification of everything is driving the need for higher levels of power fidelity in applications such as sustainability, data centers and aerospace and defense. This presentation focuses on leveraging the latest, innovative SiC power packaging, which is crucial to unlock high system performance and enable high current, high power and efficient switching applications.
11:00
S8
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(presentation title to be confirmed)
  Kiran Kumar Ramachandra
 FAE Manager
 Qorvo
To be confirmed…
11:15
S9
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50% more power from SiC chips in high performance ceramic-isolated discrete packages
  Francois Perraud
 Sr. Manager, Product Management - Discrete MOSFET, SI and SIC Products
 Littelfuse
Isolated discrete packages using high performance ceramics significantly enhance the thermal performance of power conversion designs and simplify the assembly steps in production. SiC MOSFETs can remain more than 50°C cooler, or the system power output increased by more than 45% as compared to systems built using standard non-isolated discrete components, while eliminating the need for external isolation foils.
11:30
S10
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(presentation title to be confirmed)
  Speaker to be confirmed
 
 3D-Micromac
To be confirmed…
11:45
B2
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Lunch Break & Tabletop Exhibition
  
 
 
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
13:30
S11
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(presentation title to be confirmed)
  Dr. Nils Soltau
 Deputy Manager, Technical Marketing High Power
 Mitsubishi Electric
To be confirmed…
13:45
S12
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Powering the Future: Harnessing 2kV SiC for a Decentralized Grid
  Emiliano Meza
 Senior Product Marketing Manager
 Semikron Danfoss
The power grid is becoming increasingly decentralized with the integration of solar, energy storage systems, and EV charging infrastructure. 2kV silicon carbide is a key technology for interfacing these various resources. In this presentation we will highlight power modules equipped with 2kV SiC MOSFETs and how they are applied to applications from 100kW to 1MW. As a chip-independent manufacturer, Semikron Danfoss offers state-of-the-art packaging solutions that optimize performance and reliability. This positions us as a leader in the green transition towards a more integrated and resilient energy future.
14:00
S13
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(presentation title to be confirmed)
  Speaker to be confirmed
 
 ROHM Semiconductor
To be confirmed…
14:15
S14
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Accurate SiC Simulation in SPICE and PLECS
  Dr. Didier Balocco
 Technical Marketing Engineer
 onsemi
SiC is still a relative new material. Every new generation brings more performances to improve system or application efficiency. But, to compare or evaluate the advantage to move on, designer need tools to compare at system level the benefits. SPICE, invented in the 70’s, doesn’t know SiC material and specific characteristics. onsemi build all SiC physical equations to describe SiC operation and implement then in SPICE. With such powerful SPICE models, accurate simulation results can be obtained. For every designer, losses are the focus. As we will see in this session, onsemi SPICE models can predict then if the environment is also modeled. The drawback of SPICE is the simulation time need for big system. PLECS overcomes this by using a state change technic and models including precalculated losses. As it will be demonstrated in the previous section on SPICE, system losses don’t depend only on active devices. There are interactions between active and passive devices, influencing each other’s. For this, onsemi bring a new tool : the “Self-Service PLECS Model Generator” in complement with the “Elite Power Simulator” tool, a system simulation platform based on PLECS. The model generator objective is to predict accurately the losses by including in the PLECS models the system environment and interactions between each design specific passive and active parts. The second section will show examples and comparisons between SPICE results and PLECS results. It will prove the superior accuracy of using the model generator to predict system losses.
14:30
S15
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(presentation title to be confirmed)
  Hadiuzzaman Syed
 Developer- Power Semiconductor (Silicon Carbide) / Power Module
 Bosch
To be confirmed…
14:45
B3
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Coffee Break & Tabletop Exhibition
  
 
 
All breaks and catering, as well as the tabletop exhibition, will take place in the foyer.
The perfect spot for networking and learning about the latest products and services!
15:30
S16
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Use cases of SiC Technology in industrial Applications
  David Chilachava
 Technical Marketing Manager
 Vincotech
With the global goals of reducing the carbon footprint and achieving sustainable energy growth, SiC technology with its superior properties plays a pivotal role. The huge investments and expansions in SiC capacities, driven mainly by e-mobility and cost optimization, make it more and more attractive for various industrial applications. This presentation explores the benefits of selected SiC use cases, such are hybrid inverters for renewable energy systems and energy storage systems, charging infrastructures for electric vehicles, data centers for AI and cryptocurrencies and motor drive applications.
15:45
S17
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SiC MOSFET with high temperature stability
  Dr. Georgio El-Zammar
 SiC Senior Development Engineer
 Nexperia
Silicon carbide (SiC) MOSFETs are typically characterized by their RDS(on) values measured at 25°C, with this temperature reflected in device naming conventions. However, in real-world applications, these MOSFETs often operate at higher temperatures due to power losses, leading to an increase in RDS(on). The rise in RDS(on) with temperature can significantly affect the overall efficiency of the application. Therefore, understanding and ensuring the temperature stability of RDS(on) is crucial for optimizing performance. This presentation will explore the impact of RDS(on) temperature stability on application efficiency and why it is a critical factor in power electronics.
16:00
S18
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Challenges of measuring high-voltage Wide Bandgap devices
  Dr. Alexander Küllmer
 Application Engineer Oscilloscopes
 Rohde & Schwarz
Explore the cutting-edge challenges of measuring high-voltage Wide Bandgap (WBG) devices in this concise short presentation. We will address critical issues engineers are facing in fast-switching WBG applications, including offset voltages, noise and thermal drift, and common-mode voltage derating. We will examine traditional isolation methods and introduce optical isolation as a breakthrough solution for high-frequency WBG testing, especially on wideband current sensing approach. Discover how a dedicated front-end amplifier can revolutionize measurement accuracy, mitigating thermal drift and voltage spikes for superior performance in high-frequency WBG testing. This session offers practical insights for engineers and professionals working with high-voltage and high isolating environments, equipping them with innovative strategies for measurement integrity in the rapidly evolving field of WBG technology. Join us to stay ahead in the power electronics revolution and optimize your power electronics measurement techniques.
16:15
S19
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SiC Inverter Control Modules & Reference Designs
How to increase efficiency and accelerate time to market
  Mike Sandyck
 Marketing Director
 CISSOID
Harnessing the full potential of Silicon Carbide can be daunting. Our inverter control modules and reference designs bring proven and completely customizable solutions from the lab over in-vehicle prototyping and on into production series. A state-of-the-art processor and innovative software offer solutions to maximize efficiency and reduce harmonic distortion.
16:30
S20
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CoolSiC™ MOSFET 750 V Generation 2: enhancing bidirectional charging of electric vehicles and boosting their performance
  Mario Zotes
 Director Product Marketing – High Voltage
 Infineon
Bidirectional charging is widely considered for new vehicle architectures, significantly impacting new on-board charger designs. On the one hand, new use cases such as V2L, V2H, and V2G are picking up, while on the other hand, the charging requirements for electric vehicles are becoming increasingly stringent to fulfill the needs of new vehicle architectures. In this session, we will review how the transition to bidirectional charging has significantly accelerated the adoption of Silicon-Carbide MOSFETs and how Infineon is paving the way for new charging architectures with our upcoming CoolSiC™ MOSFET 750 V based on the Generation 2 technology.
16:45
S21
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(This slot is still available)
  Speaker to be confirmed
 
 
To be confirmed…