Bodo's WBG - Conference Bag

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Conference Bag

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S1	Leo Aichriedler (Infineon Technologies) Silicon Carbide JFETs enable breakthroughs of high-voltage solid state power distribution
S2	Salvatore La Mantia (STMicroelectronics) Paralleling SiC MOSFETs: A Robust Approach for High-Power Converter Performance and Thermal Management
S4	Dr. Tomas Krecek (Alpha and Omega Semiconductor) Selection and Optimization of Topside Cooling Options for Discrete SiC MOSFETs for High Power Density Applications
S5	Dr. Virgiliu Botan (Hitachi Energy) Design and Reliability Considerations for 3.3kV SiC Modules in Traction
S6	Dr. Christian Felgemacher (ROHM Semiconductor) Increasing power density with small molded modules in medium power applications
S7	Dr. Darko Vračar (The Exploration Company) SiC semiconductors in space applications: trends, challenges and opportunities
S8	Dr. Andrei Mihaila (StarPower) Advanced SiC technology for automotive applications
S9	Roy Hali (HIOKI) Accurate Efficiency Analysis for WBG inverters: Confidently Capturing 0.1% Improvements
S10	Dr. Jorge Mari (Semikron Danfoss) Efficient and Reliable 2kV SiC Power Modules for DC Infrastructure and Renewables
S11	Fatih Cetindag (Nexperia) Comparative Analysis of Power and Thermal Performance in SiC MOSFET SMD Packages: X.PAK, QDPAK & D²PAK-7
S13	Dr. Rosemary O’Keeffe (Bourns) The Application of Miniature Planar Gate Drive Transformers
S14	Karsten Düchting (Allegro MicroSystems ) Beyond the FET: Solving the Practical Challenges of SiC Gate Drive Design
S15	Hadiuzzaman Syed (Bosch) SiC MOSFET Gen 2.0: Rugged in Radiation, Softer in switching
S16	Sascha Dern (Navitas Semiconductor) Performance and Reliability Gains in MVHV SiC Using Advanced Power Devices and Packaging Technologies
S17	Sebastian Pawusch (Fuji Electric) Benefits of 3-level power modules in Automotive traction inverters
S18	Andrea Vinci (Tektronix) Assessing the aggregate behavior of paralleled SiC Mosfets
S19	Dr. Didier Balocco (onsemi) Next-Gen Motor Drives : Exploring SiC
S20	Dr. Ajay Poonjal Pai (Sanan Semiconductor) Selecting the Right SiC MOSFET Device: A Key to Efficient Zero-Voltage Switching
S21	Mauro Ceresa (Wolfspeed) Going Beyond a Qualification Report: Power Cycling and Lifetime Modeling
G1	Sebastian Klötzer (Nexperia) GaN In-Circuit Reliability: Dynamic Life Testing of 650 V GaN FETs
G2	Dr. Alex Lidow (Efficient Power Conversion (EPC)) GaN Integrated Circuits for Motor Drives
G3	Harald Parzhuber (Texas Instruments) Power conversion with bi-directional GaN in a single stage converter for micro inverters and portable power stations
G4	Dr. Edward A. Jones (Infineon Technologies) GaN bidirectional switch (BDS) innovation and related applications
G5	Eli Hanak (Plexim) PLECS meets Spice: One Model. From Systems to Semiconductors.
G6	Dr. Ester Spitale (STMicroelectronics) Compact, lightweight, and cost-effective high-voltage motor control inverter with GaN
G7	Patrick Minton (X-FAB) The GaN Foundry Model: A GameChanger for the Next Wave of Innovation
G8	Dr. Timothy Polom (ROHM Semiconductor) Driving integration – Compact power supplies with the GaN System-In-Package
G9	Bétina Bebey (NXP Semiconductors) The adoption of GaN technologies for EV traction inverter solutions
G10	Marco Ruggeri (Renesas Electronics) From Back-to-Back to Monolithic: The Role of GaN BDS in Next-Generation Power Electronics
G11	Llew Vaughan-Edmunds (Navitas Semiconductor) High-Power GaN ICs & FETs Enable Efficiency and Power Density Requirements in Next Gen 800V AI Data Centers
G12	Dr. Subhash Pidaparthi (onsemi) Vertical GaN: Breakthrough for AI & Automotive Electrification
G13	Andrew Smith (Power Integrations) High Voltage GaN: Delivering 800 V DC bus architectures for Power-Hungry Data Centers
G14	Pierrick Ausseresse (Infineon Technologies) HV Intermediate bus converter as essential link to power server boards directly from 800V DC
G15	Dieter Liesabeths (VisIC Technologies ) GAN Power Module for high power BEV Inverter Applications
G16	Dr. Samaneh Sharbati (University of Southern Denmark) Advancing GaN Power Device Technology: Theoretical Insights into Reliability, Switching Behavior, and Device-Level Design Optimization
G17	Dr. Stefania Carapezzi (Silvaco) Improving GaN Model Accuracy
G18	Farhan Beg (Cambridge GaN Devices (CGD)) Unlocking the Potential of Multi-level Inverters with Integrated GaN technologies
G19	David Czajkowski (MinDCet) Fully Integrated GaN Solutions with Monolithic GaN-Ics
G20	Dr. Maik Kaufmann (Texas Instruments) Package-integrated GaN motor drive IPM exceeding 99% efficiency at 250W
G21	Dr. Roy Dagher (YOLE) GaN at the Tipping Point: from Market expansion to OEM adoption

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